The newly validated DDR3 solutions are based on advanced 50 nanometer (nm) class technology and 2Gb memory components developed last September. By utilizing 50nm-class technology, Samsung’s 2Gb DDR3 modules can consume considerably less power than conventional 1Gb DDR3 modules, up to a maximum of 40 percent less at 1333Mbps.
“Developing higher density DRAM memory while lowering power consumption is a notable achievement. Samsung’s 4GB DDR3 modules are a natural match for platforms based on Intel’s new Core™ i7 products, which deliver the best of both worlds: high performance and energy efficiency,” said Paul Fahey, Director of Platform Memory Operations, Intel Corporation.
Working closely with Intel, Samsung has been driving development of its most advanced DRAM technologies and production processes to enable significant improvements in system performance, while meeting fast time-to-market demands.
According to market research firm IDC, DDR3 is expected to account for 29 percent of the total DRAM market in units sold in 2009, and attain a 72 percent DRAM market share by 2011. In addition, the DDR3 segment made up of 2Gb devices is forecast to grow from 3 percent in 2009 to 33 percent in 2011.
