SEOUL, KOREA - SK Hynix developed the world's first 8-gigabyte DDR3 mobile DRAM using the 25 nano technology, staying one step ahead of Samsung Electronics' 25 nano 4-Gb mobile DRAM that started being mass-produced from April.
SK Hynix announced on June 10 that it has completed the development of 8-Gb mobile DRAMs for the first time in the world and will begin mass-production from the end of this year.
Developed to cope with the rising demand for use in smartphones that require over 2-Gb memories, the newly developed 8-Gb mobile DRAM realizes both high capacity and low voltage.
SK Hynix officials said, "From the latter part of this year, the distribution of the smartphones with over 2-Gb high capacity memories will increase in earnest."
From the perspective of speed, the brand-new 8-Gb mobile DRAM realized the speed of 2,133 Mbps, faster than the existing LPDDR3's data transmission speed of 1,600 Mbps. The 8-Gb mobile DRAM can be used for mobile devices as a package consisting of PoP and eMMC.
