SEOUL, KOREA- SK Hynix announced on October 30 that it has developed a 6-GB LPDDR3 memory by applying 20 nanometer-class technology.Following its world’s first development of 8-GB LPDDR3 memory chip in June, SK Hynix succeeded in developing a 6-GB variety this time, which would contribute to strengthening the competitiveness of its high-capacity mobile lineups. If the latest model is stacked up to four tiers, a high-capacity of 3 GB can be realized in a single package.

SK Hynix explained that compared to the same-capacity package that is created by stacking 4 GB up to six tiers, the model helps reduce the motion and standby power consumption by up to 30 percent.

With a 1,866-Mbps speed, the high-capacity 6-GB LPDDR3 can process data up to 7.4 GB per second through a single channel and 14.8 GB through a dual channel with its 32 I/Os. SK Hynix aims to start mass-production of the high-capacity 6-GB LPDDR3 from next year.