SEOUL, KOREA - SK Hynix announced on September 3 that it has developed the next-generation “Wide IO2 Mobile DRAM,” first in industry.
The newly-developed Wide IO2 is one of next-generation high performance mobile DRAMs, for which standardization is underway at the Joint Electron Device Engineering Council (JEDEC).
Wide IO2 is a 8Gb model which adopts a state-of-the-art 20 nanometer-class micro process to strengthen the low power property same as LPDDR4 Mobile DRAM.
In addition, with the greatly increased number of I/O, Wide IO2 achieved improvements in data processing speed.
Existing LPDDR4 operates at a speed of 3,200Mbps, and process 12.8GB data per second by using 32 I/Os. Wide IO2 has 512 I/Os, thereby processing data of up to 51.2 GB per second.
SK Hynix plans to start mass-production of Wide IO2 from the second half of next year.
