In an interview held after Samsung Electronics presented its second-quarter results on July 30, Baek Jee-ho, senior vice president of Samsung Electronics, said, “We already developed V-NAND by up to the second generation. We expect the 3G V-NAND to be developed by the third quarter of this year or October at the latest.”
Baek stressed, “Once the 3G V-NAND is developed, it would have unrivaled cost competitiveness. It could contribute to boosting high-end demand by leveraging the strength of V-NAND, including high reliability, high capacity and high performance.”
He noted, “Depending on situation after 3G V-NAND is developed, we will adjust the ‘ramp up’ timing. Although it is not fixed yet, we expect the volume to grow more than three times in the second half compared to that of the first half.”
