Samsung announced that it has begun mass production of 10-nanometer (nm) class 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips.
DDR4 is quickly becoming the most widely produced memory for personal computers and IT networks in the world, and Samsung expects to accelerate the industry-wide shift to advanced DDR4 products.
Samsung’s 10nm-class 8Gb DDR4 DRAM improves the wafer productivity of 20nm 8Gb DDR4 DRAM by more than 30 percent.
The new DRAM supports a data transfer rate of 3,200 megabits per second (Mbps), which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”
Samsung expects to also introduce a 10nm-class mobile DRAM solution with high density and speed later this year for the ultra-HD smartphone market.
While introducing a wide array of 10nm-class DDR4 modules with capacities ranging from 4GB for notebook PCs to 128GB for enterprise servers, Samsung will be extending its 20nm DRAM line-up with its new 10nm-class DRAM throughout the year.
