Samsung Electronics today announced several groundbreaking additions to its comprehensive semiconductor ecosystem that encompass next-generation technologies in foundry as well as NAND flash, SSD (solid state drive) and DRAM.
Together, these developments mark a giant step forward for Samsung’s semiconductor business.
Unveiled at its annual Samsung Tech Day include:
- 7nm EUV process node from Samsung’s Foundry Business, providing significant strides forward in power, performance and area.
- SmartSSD, a field programmable gate array (FPGA) SSD, that will offer accelerated data processing and the ability to bypass server CPU limits.
- QLC-SSD for enterprise and datacenters that offer 33-percent more storage per cell than TLC-SSD, consolidating of storage footprints and improving total cost of ownership (TCO).
- 256-gigabyte (GB) 3DS (3-dimensional stacking) RDIMM (registered dual in-line memory module), based on 10nm-class 16-gigabit (Gb) DDR4 DRAM that will double current maximum capacity to deliver higher performance and lower power consumption.
“Samsung’s technology leadership and product breadth are unparalleled,” said JS Choi, President, Samsung Semiconductor, Inc. “Bringing 7nm EUV into production is an incredible achievement. Also, the announcements of SmartSSD and 256GB 3DS RDIMM represent performance and capacity breakthroughs that will continue to push compute boundaries. Together, these additions to Samsung’s comprehensive technology ecosystem will power the next generation of datacenters, high-performance computing (HPC), enterprise, artificial intelligence (AI) and emerging applications.”
